A new insight into the dynamic fluctuation mechanism of stress-induced leakage current

Author

Ishida, T. ; Tega, N. ; Mori, Y. ; Miki, H. ; Mine, T. ; Kume, H. ; Torii, K. ; Muraguchi, M. ; Takada, Y. ; Shiraishi, K. ; Yamada, R.

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

604

Lastpage

609

Abstract

The dynamic fluctuation of stress-induced leakage current, called V-SILC, which is one of the causes of erratic bits in flash memory, was investigated. The effect of V-SILC on flash memory retention increases with the scaling down of device dimensions because the amplitude of V-SILC is constant and does not depend on the gate area. A statistical analysis of V-SILC indicated that V-SILC is random telegraph noise (RTN) of gate SILC and is associated with the state transition of a single defect in a gate oxide. The state transition of the defect is caused by an electron collision with the defect.

Keywords

MOS capacitors; flash memories; fluctuations; leakage currents; random noise; statistical analysis; stress effects; MOS capacitors; V-SILC; dynamic fluctuation mechanism; electron collision; flash memory retention; gate oxide; random telegraph noise; statistical analysis; stress-induced leakage current; Current measurement; Flash memory; Fluctuations; Leakage current; MOS capacitors; Random access memory; Semiconductor device noise; Statistical analysis; Telegraphy; Threshold voltage; RTN; SILC; dynamic fluctuation; random telegraph noise; stress-induced leakage current;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558953

Filename

4558953