Title :
Charge Bursts Through Dielectric Layers of 4H-SiC/SiO2 Metal Oxide Semiconductor Capacitors
Author :
Marinella, M.J. ; Schroder, D.K. ; Chung, G.Y. ; Loboda, M.J. ; Isaacs-Smith, T. ; Williams, J.R.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fDate :
April 27 2008-May 1 2008
Abstract :
Small bursts of inversion layer charge in 4H-SiC metal oxide semiconductor capacitors leak through the oxide layer leading to discontinuities during capacitance-time measurements. This behavior has been observed using non-equilibrium capacitance-time (C-t) and current-time (I-t) measurements, at room temperature and at 400degC.
Keywords :
MOS capacitors; dielectric materials; inorganic compounds; semiconductor materials; SiC-SiO2; charge bursts; current-time measurements; dielectric layers; during capacitance-time measurements; inversion layer charge; metal oxide semiconductor capacitors; nonequilibrium capacitance-time measurements; temperature 293 K to 298 K; temperature 400 degC; Capacitance measurement; Current measurement; Dielectric breakdown; MOS capacitors; MOSFET circuits; Physics; Silicon carbide; Solid state circuits; Temperature measurement; Wideband;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558957
