Title :
A gate-controllable high-voltage SCR device with high performance in ESD protection and latch-up immunity
Author :
Chien, Tuo-Hsin ; Hsu, Klaus Y J
Author_Institution :
Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
fDate :
April 27 2008-May 1 2008
Abstract :
A simple gate-controllable high-voltage silicon-controlled rectifier (GC-HVSCR) is proposed in this work. With simply using an integrated control nMOS, the device can provide ESD protection while avoiding the conventionally annoying latch-up problem in SCR under normal circuit operation condition. The behavior of the proposed device has been studied by simulations and verified by real implementation in a 0.5-mum high-voltage (30 V) CMOS process.
Keywords :
CMOS integrated circuits; electrostatic discharge; thyristors; ESD protection; gate-controllable high-voltage SCR device; high-voltage CMOS process; integrated control nMOS; latch-up immunity; silicon-controlled rectifier; size 0.5 micron; voltage 30 TV; Anodes; CMOS process; Cathodes; Centralized control; Circuit simulation; Electrostatic discharge; MOS devices; Protection; Thyristors; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558960
