The influence of oxygen doping of channel of organic field-effect transistor based on nickel phthalocyanine on the output parameters

Author

Stakhira, Pavlo ; Cherpak, Vladyslav ; Pakhomov, Georgiy ; Volynyuk, Dmytro ; Dutchak, Zoya ; Hladun, Mykhaylo

Author_Institution

Lviv Polytech. Nat. Univ., Lviv, Ukraine

fYear

2010

fDate

23-27 Feb. 2010

Firstpage

334

Lastpage

334

Abstract

The influence of nickel phthalocyanine (NiPc) thin film doping by oxygen on electric parameters of organic transistor structures of Si/SiO₂/NiPc/Au was investigated. The complex analysis of structure and electrical&physical characteristics of thin films of organic low-molecular semiconductor after influence of oxygen during seven days was carried out.

Keywords

MIS devices; elemental semiconductors; gold; organic field effect transistors; organic semiconductors; semiconductor doping; silicon; silicon compounds; thin film transistors; Si-SiO₂-Au; electric parameters; low-molecular semiconductor; nickel phthalocyanine; organic field-effect transistor; oxygen doping; thin film; Charge carriers; Conductivity; Nickel; OFETs; Organic semiconductors; Semiconductor device doping; Semiconductor thin films; Sputtering; Substrates; X-ray diffraction; OFET; organic semiconductors; thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on

Conference_Location

Lviv-Slavske

Print_ISBN

978-966-553-875-2

Electronic_ISBN

978-966-553-901-8

Type

conf

Filename

5445953