Electrothermal model for MIM TaON capacitors during ESD HBM pulses

Author

Verchiani, M. ; Bouyssou, E. ; Cantin, F. ; Anceau, C. ; Ranson, P.

Author_Institution

STMicroelectronics, Tours

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

631

Lastpage

632

Abstract

This work focuses on ESD HBM robustness of metal insulator metal TaON capacitors. An electrothermal model including a complete leakage current description and a thermal RC network is proposed to explain the ESD experimental results. The leakage current description is based on a Poole-Frenkel mechanism combined with a TDDB theory.

Keywords

MIM devices; Poole-Frenkel effect; RC circuits; capacitors; electrostatic discharge; semiconductor device breakdown; tantalum compounds; ESD HBM pulses; Poole-Frenkel mechanism; TDDB theory; TaON; electrothermal model; human body model; leakage current; metal insulator metal capacitors; thermal RC network; time dependent dielectric breakdown; Dielectrics; Electrostatic discharge; Electrothermal effects; Impedance; Leakage current; MIM capacitors; Predictive models; Robustness; Temperature; Thermal resistance; CVS; ESD HBM; MIM capacitors; TaON; dielectric breakdown; electrothermal modeling; thermal breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558961

Filename

4558961

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2051683