DocumentCode
2051708
Title
Adarlington-based SCR ESD protection device for high-speed applications
Author
Sarbishaei, Hossein ; Lubana, Sumanjit Singh ; Semenov, Oleg ; Sachdev, Manoj
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Waterloo, ON
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
633
Lastpage
634
Abstract
Silicon controlled rectifiers (SCRs) are used extensively in high frequency applications. To reduce their first breakdown voltage, they are used with different triggering mechanisms. In this paper, a novel ESD protection device is proposed that can reduce the first breakdown voltage of SCR to 3V without any extra triggering devices.
Keywords
bipolar transistors; electrostatic discharge; thyristors; trigger circuits; Darlington-based SCR; ESD protection device; bipolar transistors; breakdown voltage; silicon controlled rectifiers; triggering mechanisms; voltage 3 V; Application software; Avalanche breakdown; Bipolar transistors; CMOS technology; Electrostatic discharge; Equivalent circuits; Frequency; Parasitic capacitance; Protection; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558962
Filename
4558962
Link To Document