DocumentCode :
2051737
Title :
Acomprehensive compact SCR model for CDM ESD circuit simulation
Author :
Lou, Lifang ; Liou, Juin J.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL
fYear :
2008
fDate :
April 27 2008-May 1 2008
Firstpage :
635
Lastpage :
636
Abstract :
We have presented a comprehensive SCR compact model for CDM simulation. The work illustrated the useful and effective macromodeling approach of integrating the various industry standard models to describe the different devices imbedded in the SCR and treating the CDM-relevant operation states. In additional to the prediction of TLP results, the presented model demonstrates the effectiveness in analyzing CDM response of the I/O circuits and successfully explains why the input pins have lower CDM robustness than the output pins.
Keywords :
BiCMOS integrated circuits; circuit simulation; electrostatic discharge; semiconductor device models; thyristors; BiCMOS process; CDM ESD circuit simulation; CDM stresses; I/O circuits; comprehensive compact SCR model; industry standard models; macromodeling approach; Biological system modeling; Circuit simulation; Electrostatic discharge; Light emitting diodes; Pins; Protection; RLC circuits; Stress; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
Type :
conf
DOI :
10.1109/RELPHY.2008.4558963
Filename :
4558963
Link To Document :
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