Title :
3D device modeling of damage due to filamentation under an ESD event in nanometer scale drain extended NMOS (DE-NMOS)
Author :
Chatterjee, Amitabh ; Pendharkar, Sameer ; Gossner, Harald ; Duvvury, Charvaka ; Banerjee, Kaustav
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA
fDate :
April 27 2008-May 1 2008
Abstract :
We present a detailed understanding of filamentation, through rigorous mixed-mode 3D simulation in a nano-meter scale drain-extended NMOS (DE-NMOS). Localization is first triggered in the 2D plane due to regenerative turn-on of the parasitic bipolar. 3D Simulations performed by adding width along the Z-axis (i.e., W) show a very prominent localization effect, which leads to electro-thermal runaway in the DE-NMOS and causes an irreversible damage.
Keywords :
MOSFET; bipolar transistors; electrostatic discharge; nanoelectronics; semiconductor device models; thermal analysis; 3D device modeling; DE-NMOS; ESD event; electro-thermal runaway; filamentation; irreversible damage; localization effect; nanometer scale drain-extended NMOS; parasitic bipolar; rigorous mixed-mode 3D simulation; CMOS technology; Circuits; Computational modeling; Discrete event simulation; Electrostatic discharge; MOS devices; Nanoscale devices; Protection; Silicon; Voltage;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558965
