Analytical model of radiation response in FDSOI MOSFETS

Author

McLain, Michael L. ; Barnaby, Hugh J. ; Adell, Philippe C.

Author_Institution

Dept. Of Electr. Eng., Arizona State Univ., Tempe, AZ

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

643

Lastpage

644

Abstract

It was recently shown that band-to-band tunneling (BBT), in combination with trapped charge buildup in the buried oxide, affects the radiation response in some fully-depleted silicon-on-insulator (FDSOI) MOSFET technologies. In this paper, an analytical model for these radiation response characteristics is proposed. The charge coupling between the front and back gates is demonstrated analytically using closed-form expressions for the back-gate threshold voltage as a function of trapped charge in the buried oxide and front gate voltage.

Keywords

MOSFET; radiation effects; silicon-on-insulator; tunnelling; Si; back gates; back-gate threshold voltage; band-to-band tunneling; buried oxide voltage; charge coupling; closed-form expressions; front gate voltage; radiation response; silicon-on-insulator MOSFET technologies; trapped charge buildup; Analytical models; Charge carrier processes; Electron traps; Leakage current; MOSFETs; Propulsion; Silicon on insulator technology; Space technology; Threshold voltage; Tunneling; Total ionizing dose; band-to-band tunneling; buried oxide; fully-depleted SOI; oxide trapped charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558967

Filename

4558967