DocumentCode
2051834
Title
Current leakage evolution in partially gate-ruptured power MOSFETs
Author
Scheick, Leif ; Selva, Luis ; Chen, Yuan ; Edmonds, Larry
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
645
Lastpage
646
Abstract
The range of resulting leakage from single-event gate rupture (SEGR) in power MOSFETs spans several decades, from hundreds of nanoamps to tens of milliamps being qualified as rupture events. The differences in the magnitude of the breaks are correlated to the physical and operational effects of the devices investigated. The maximum leakage current that a part may endure and not destroy itself is determined experimentally and analytically.
Keywords
MOSFET circuits; leakage currents; power amplifiers; amplifiers; current leakage evolution; partially gate-ruptured power MOSFETs; single-event gate rupture; Circuits; Degradation; Laboratories; Leakage current; MOSFETs; Nanoscale devices; Resistance heating; Temperature; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558968
Filename
4558968
Link To Document