DocumentCode
2051859
Title
Visualization and damage due to nano-dendrite defects in metal-insulator-metal capacitors
Author
Sheng, Lieyi ; Snyder, Eric ; Steidley, Shane ; Sierra, Anna ; Glines, Eddie
Author_Institution
AMI Semicond., Pocatello, ID
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
649
Lastpage
650
Abstract
Metal-insulator-metal (MIM) capacitors have found wide use in analog/mixed-signal IC products. However, a variety of extrinsic defects can occur during manufacture. Surface roughness and particles have been proposed as major sources of defects, but there have been no reported methods to visually elucidate how the defect interacts with its surroundings or correlation of the defect with the failure mode. Defect visualization can turn out to be crucial in finding the origin of defects and improving the process. There are unique challenges in visualizing tiny defects in MIM capacitors, because an electrical analysis can easily destroy a defect by interlayer fusion and voiding, or separation. This paper deals with the analysis technique used to nondestructively identify the defects, and then reviews the detrimental aspects of a new type of defects by Transmission Electron Microscopy/Energy Dispersive X-ray (TEM/EDX) analysis.
Keywords
MIM devices; capacitors; dendrites; failure analysis; nondestructive testing; semiconductor device testing; surface roughness; MIM capacitors; analog/mixed-signal IC products; defect visualization; electrical analysis; energy dispersive X-ray analysis; extrinsic defects; failure mode; interlayer fusion; metal-insulator-metal capacitors; nanodendrite defects; surface roughness; transmission electron microscopy; voiding; Ambient intelligence; Degradation; Failure analysis; MIM capacitors; Metal-insulator structures; Scanning electron microscopy; Tin; Transmission electron microscopy; Visualization; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558970
Filename
4558970
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