• DocumentCode
    2051859
  • Title

    Visualization and damage due to nano-dendrite defects in metal-insulator-metal capacitors

  • Author

    Sheng, Lieyi ; Snyder, Eric ; Steidley, Shane ; Sierra, Anna ; Glines, Eddie

  • Author_Institution
    AMI Semicond., Pocatello, ID
  • fYear
    2008
  • fDate
    April 27 2008-May 1 2008
  • Firstpage
    649
  • Lastpage
    650
  • Abstract
    Metal-insulator-metal (MIM) capacitors have found wide use in analog/mixed-signal IC products. However, a variety of extrinsic defects can occur during manufacture. Surface roughness and particles have been proposed as major sources of defects, but there have been no reported methods to visually elucidate how the defect interacts with its surroundings or correlation of the defect with the failure mode. Defect visualization can turn out to be crucial in finding the origin of defects and improving the process. There are unique challenges in visualizing tiny defects in MIM capacitors, because an electrical analysis can easily destroy a defect by interlayer fusion and voiding, or separation. This paper deals with the analysis technique used to nondestructively identify the defects, and then reviews the detrimental aspects of a new type of defects by Transmission Electron Microscopy/Energy Dispersive X-ray (TEM/EDX) analysis.
  • Keywords
    MIM devices; capacitors; dendrites; failure analysis; nondestructive testing; semiconductor device testing; surface roughness; MIM capacitors; analog/mixed-signal IC products; defect visualization; electrical analysis; energy dispersive X-ray analysis; extrinsic defects; failure mode; interlayer fusion; metal-insulator-metal capacitors; nanodendrite defects; surface roughness; transmission electron microscopy; voiding; Ambient intelligence; Degradation; Failure analysis; MIM capacitors; Metal-insulator structures; Scanning electron microscopy; Tin; Transmission electron microscopy; Visualization; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2049-0
  • Electronic_ISBN
    978-1-4244-2050-6
  • Type

    conf

  • DOI
    10.1109/RELPHY.2008.4558970
  • Filename
    4558970