Nanoscale effects of annealing on the electrical characteristics of hafnium based devices measured in a vacuum environment

Author

Aguilera, L. ; Polspoel, W. ; Volodin, A. ; Haesendonck, C. Van ; Porti, M. ; Vandervorst, W. ; Nafria, M. ; Aymerich, X.

Author_Institution

Dept.Eng.Electr., Univ. Autonoma de Barcelona, Barcelona

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

657

Lastpage

658

Abstract

In this work, a conductive atomic force microscope (C-AFM) built in a vacuum environment has been used to characterize the electrical properties of high k samples. In particular, the effect of the annealing on the electrical characteristics of ALD HfO₂ samples has been investigated by this technique.

Keywords

CMOS integrated circuits; annealing; atomic force microscopy; atomic layer deposition; hafnium compounds; high-k dielectric thin films; nanotechnology; vacuum deposition; CMOS gate dielectrics; HfO₂; annealing; atomic layer deposition; conductive atomic force microscope; hafnium based devices; nanoscale effects; vacuum environment; Annealing; Atomic force microscopy; Electric variables; Electric variables measurement; Hafnium; High K dielectric materials; High-K gate dielectrics; Nanoscale devices; Pollution measurement; Voltage; Atomic Force Microscopy (AFM); High k materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4558974

Filename

4558974