DocumentCode
2052145
Title
Unique ESD failure mechanism of high voltage LDMOS transistors for very fast transients
Author
Goyal, Abhijat ; Whitfield, Jim ; Hong, Changsoo ; Gill, Chai ; Zhan, Carol Rouying ; Kushner, Vadim ; Gendron, Amaury ; Contractor, Shiraz
Author_Institution
Technol. Solution Organ., Tempe, AZ
fYear
2008
fDate
April 27 2008-May 1 2008
Firstpage
673
Lastpage
674
Abstract
We have identified and explained a unique ESD breakdown mechanism of high voltage 80V LDMOS structures for very fast CDM transients. The device was protected against observed damage by placing a zener across the gate and source which prevents the observed voltage build up at the gate of the LDMOS.
Keywords
MOSFET; electrostatic discharge; transients; ESD failure mechanism; high voltage LDMOS transistors; very fast transients; Biological system modeling; Breakdown voltage; Clamps; Electrostatic discharge; Failure analysis; Power system transients; Protection; Road transportation; Space vector pulse width modulation; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location
Phoenix, AZ
Print_ISBN
978-1-4244-2049-0
Electronic_ISBN
978-1-4244-2050-6
Type
conf
DOI
10.1109/RELPHY.2008.4558982
Filename
4558982
Link To Document