Title :
Models defect in GaAs with multicharge implantation
Author :
Novosyadly, Stepan ; Sorokhtej, Taras
Author_Institution :
Dept. of radiophysic & Electron., Precarpathian Nat. Univ. nmd V. Stefanyk, Ivao-Frankivsk, Ukraine
Abstract :
In this paper the models defect in GaAs with multicharge implantation are given.
Keywords :
III-V semiconductors; crystal defects; gallium arsenide; ion implantation; GaAs; models defect; multicharge implantation; Amorphous materials; Annealing; Capacitive sensors; Dairy products; Embryo; Gallium arsenide; Ion implantation; Particle beam optics; Silicon; Temperature dependence; cluster; cracks; dislocation; multicharge implantation; pores;
Conference_Titel :
Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
Conference_Location :
Lviv-Slavske
Print_ISBN :
978-966-553-875-2
Electronic_ISBN :
978-966-553-901-8
