Title :
Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories
Author :
Liu, Ziyuan ; Saito, Tomoya ; Matsuda, Tomoko ; Ando, Koichi ; Ito, Shu ; Wilde, Markus ; Fukutani, Katsuyuki
Author_Institution :
Test & Anal. Eng. Div., NEC Electron. Corp., Kanagawa
fDate :
April 27 2008-May 1 2008
Abstract :
We demonstrate that hydrogen (H) atom penetration into the bottom oxide (BTO) of ONO stacks degrades the retention reliability of MONOS memory. We observe that post-nitride (SiN) N2-annealing improves the retention through a suppression of the H atom diffusion in ONO stacks. Nuclear reaction analysis revealed the presence of an ultra thin H-storage layer in the top oxide/SiN interface, which can effectively shield the BTO from H diffusion, and in turn provides H species resistant against energetic electron damage.
Keywords :
MIS devices; annealing; integrated circuit reliability; integrated memory circuits; MONOS memory; ONO stacks; bottom oxide; data retention; energetic electron damage; hydrogen atom penetration; hydrogen distribution; oxide-nitride-oxide stacks; post-nitride annealing; retention reliability; Acceleration; Atomic layer deposition; Atomic measurements; Degradation; Electronic equipment testing; Electrons; Equations; Hydrogen; MONOS devices; Silicon compounds;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4558998
