• DocumentCode
    2052599
  • Title

    Impact of mid-bond testing in 3D stacked ICs

  • Author

    Taouil, Mottaqiallah ; Hamdioui, Said ; Marinissen, Erik Jan ; Bhawmik, Sudipta

  • Author_Institution
    Fac. of EE, Math. & CS, Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2013
  • fDate
    2-4 Oct. 2013
  • Firstpage
    178
  • Lastpage
    183
  • Abstract
    In contrast to planar ICs, during the manufacturing of three-dimensional stacked ICs (3D-SICs) several tests such as pre-bond, mid-bond, post-bond and final tests can be applied. This in turn results into a huge number of test flows/strategies. Selecting appropriate and efficient test flow (for given design and manufacturing parameters such as stack size, die yield, stack yield, etc) is crucial for overall cost optimization. To evaluate the test flows, a case study is performed in which 3D-COSTAR is used to compare the overall cost of producing a 3D-SIC using variable fault coverage during the mid-bond tests. In addition, we investigate the impact of the logistics cost for various test flows. The impact of logistics costs depend on the outsourced processing steps during the manufacturing. Simulation results show, for our parameters, that by choosing an appropriate test flow the overall 3D-SIC cost for appropriate fault coverages can reduce the overall cost up to 20% for a 5-layered 3D-SIC with die yields of 90%.
  • Keywords
    fault diagnosis; integrated circuit design; integrated circuit testing; integrated circuit yield; silicon compounds; three-dimensional integrated circuits; 3D stacked IC; 3D-COSTAR; 3D-SIC cost; SiC; cost optimization; cost reduction; die yields; fault coverages; logistics cost; manufacturing; mid-bond testing; outsourced processing steps; test flow; variable fault coverage; Companies; Logistics; Manufacturing; Packaging; Stacking; Testing; Three-dimensional displays; 3D integration; cost modeling; test cost; test flows;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on
  • Conference_Location
    New York City, NY
  • ISSN
    1550-5774
  • Print_ISBN
    978-1-4799-1583-5
  • Type

    conf

  • DOI
    10.1109/DFT.2013.6653603
  • Filename
    6653603