DocumentCode
2052599
Title
Impact of mid-bond testing in 3D stacked ICs
Author
Taouil, Mottaqiallah ; Hamdioui, Said ; Marinissen, Erik Jan ; Bhawmik, Sudipta
Author_Institution
Fac. of EE, Math. & CS, Delft Univ. of Technol., Delft, Netherlands
fYear
2013
fDate
2-4 Oct. 2013
Firstpage
178
Lastpage
183
Abstract
In contrast to planar ICs, during the manufacturing of three-dimensional stacked ICs (3D-SICs) several tests such as pre-bond, mid-bond, post-bond and final tests can be applied. This in turn results into a huge number of test flows/strategies. Selecting appropriate and efficient test flow (for given design and manufacturing parameters such as stack size, die yield, stack yield, etc) is crucial for overall cost optimization. To evaluate the test flows, a case study is performed in which 3D-COSTAR is used to compare the overall cost of producing a 3D-SIC using variable fault coverage during the mid-bond tests. In addition, we investigate the impact of the logistics cost for various test flows. The impact of logistics costs depend on the outsourced processing steps during the manufacturing. Simulation results show, for our parameters, that by choosing an appropriate test flow the overall 3D-SIC cost for appropriate fault coverages can reduce the overall cost up to 20% for a 5-layered 3D-SIC with die yields of 90%.
Keywords
fault diagnosis; integrated circuit design; integrated circuit testing; integrated circuit yield; silicon compounds; three-dimensional integrated circuits; 3D stacked IC; 3D-COSTAR; 3D-SIC cost; SiC; cost optimization; cost reduction; die yields; fault coverages; logistics cost; manufacturing; mid-bond testing; outsourced processing steps; test flow; variable fault coverage; Companies; Logistics; Manufacturing; Packaging; Stacking; Testing; Three-dimensional displays; 3D integration; cost modeling; test cost; test flows;
fLanguage
English
Publisher
ieee
Conference_Titel
Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT), 2013 IEEE International Symposium on
Conference_Location
New York City, NY
ISSN
1550-5774
Print_ISBN
978-1-4799-1583-5
Type
conf
DOI
10.1109/DFT.2013.6653603
Filename
6653603
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