Impacts of process induced interfacial defects on gate oxide integrity

Author

Liu, N. ; Haggag, A. ; Peschke, J. ; Moosa, M. ; Weintraub, C. ; Lazar, H. ; Campbell, G. ; Srivastava, A. ; Liu, J. ; Porter, J. ; Picone, K. ; Parrish, J. ; Jiang, J.

Author_Institution

Freescale Semicond., Inc, Austin, TX

fYear

2008

fDate

April 27 2008-May 1 2008

Firstpage

725

Lastpage

726

Abstract

In this work, voltage ramp dielectric breakdown (VRDB), time dependent dielectric breakdown, (TDDB) and bias temperature instability (BTI) were conducted to evaluate the impacts of process induced interfacial defects on GOI. It is found that process induced defects near the gate oxide edges by poor adhesion of photo resist resulted in severe effective thinning; and defects near oxide interfaces by various process steps led to the degradation of voltage acceleration factor (VAF), which is likely related to nitrogen enhanced anode hydrogen release (AHR).

Keywords

MOSFET; adhesion; photoresists; semiconductor device breakdown; adhesion; anode hydrogen release; bias temperature instability; gate oxide; interfacial defects; nMOS FET; pMOS FET; photoresist; time dependent dielectric breakdown; voltage acceleration factor; voltage ramp dielectric breakdown; Acceleration; Adhesives; Anodes; Breakdown voltage; Degradation; Dielectric breakdown; Hydrogen; Nitrogen; Resists; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2008. IRPS 2008. IEEE International

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4244-2049-0

Electronic_ISBN

978-1-4244-2050-6

Type

conf

DOI

10.1109/RELPHY.2008.4559008

Filename

4559008