Title :
Comprehensive studies of BTI effects in CMOSFETs with SiON by new measurement techniques
Author :
Liu, Z.Y. ; Huang, Daming ; Liu, W.J. ; Liao, C.C. ; Zhang, L.F. ; Gan, Z.H. ; Wong, Waisum ; Li, Ming-Fu
Author_Institution :
Dept. Microelectron., Fudan Univ., Shanghai
fDate :
April 27 2008-May 1 2008
Abstract :
In this work, we combine our recently developed recovery free on-the-fly interface traps measurement (OFIT) and fast-pulsed-measurement (FPM) to conduct a comprehensive study of BTI degradations for both n- and p-MOSFETs with SiON gate dielectric. The results provide the most reliable data for the understanding and modeling of BTI degradation and also provide new insights to re-access the impact of BTI in logic and analog circuits and SRAM applications.
Keywords :
MOSFET; SRAM chips; analogue integrated circuits; dielectric materials; integrated circuit measurement; integrated logic circuits; silicon compounds; thermal stability; BTI degradations; BTI effects; CMOSFET; SRAM applications; SiON; SiON gate dielectrics; analog circuits; bias temperature instabilities; fast-pulsed-measurement; logic circuits; n-MOSFET; on-the-fly interface traps measurement; p-MOSFET; CMOSFETs; Charge measurement; Current measurement; Degradation; Measurement techniques; Phase measurement; Plasma measurements; Pulse measurements; Stress measurement; Tunneling;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
Electronic_ISBN :
978-1-4244-2050-6
DOI :
10.1109/RELPHY.2008.4559012
