Title :
2008 IEEE international reliability physics symposium proceedings
fDate :
April 27 2008-May 1 2008
Abstract :
The following topics are dealt with: ESD; dielectric devices; nanotechnology; NBTI transistor; circuit interconnects; thin film devices; solar cells; low-k-dielectrics; high-k-dielectrics; circuit reliability; memory devices; assembly-and- packaging; failure analysis; MEMS; high voltage device; nanoscale floating body MOSFET; and NBTI induced threshold voltage shift.
Keywords :
MOSFET; electrostatic discharge; failure analysis; high-k dielectric thin films; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; integrated memory circuits; low-k dielectric thin films; micromechanical devices; nanoelectronics; solar cells; thermal stability; thin film devices; ESD; MEMS; NBTI induced threshold voltage shift; NBTI transistor; assembly-and- packaging; circuit interconnects; circuit reliability; electrostatic discharge; failure analysis; high voltage device; high-k dielectrics; low-k-dielectrics; memory devices; nanoscale floating body MOSFET; nanotechnology; solar cells; thin film devices;
Conference_Titel :
Reliability Physics Symposium, 2008. IRPS 2008. IEEE International
Conference_Location :
Phoenix, AZ
Print_ISBN :
978-1-4244-2049-0
DOI :
10.1109/RELPHY.2008.4559027
