Title :
Study and modeling neural memory based on single electron transistor using Simon simulator
Author :
Hafsi, B. ; Boubaker, A. ; Krout, I. ; Kalboussi, A.
Author_Institution :
Microelectron. & Instrum. Lab., Univ. of Monastir, Monastir, Tunisia
Abstract :
This paper presents a simulation of a single-electron transistor "SET" characteristics using MATLAB. SET I-V characteristics presented by developing MATLAB programs. Then we propose a neural circuitry based on single electron transistors. This kind of neural circuitry can be considered as a single-electron memory "SEM" with four voltages inputs and capacitors connected to a three-island structure extended with an extra junction. We present and discuss the functionality of this device using the SIMON simulator.
Keywords :
circuit simulation; digital simulation; island structure; mathematics computing; neural chips; single electron transistors; storage management chips; MATLAB programs; SEM; SET I-V characteristics; SET characteristics simulation; Simon simulator; neural circuitry; neural memory modelling; single electron transistor; single-electron memory; three-island structure; Application software; Biological neural networks; Integrated circuit modeling; Logic gates; Mathematical model; Neurons; Single electron transistors; MATLAB; Neural network; Orthodox theory; SIMON; Single electron memory; Single electron transistor;
Conference_Titel :
Systems, Signals and Devices (SSD), 2012 9th International Multi-Conference on
Conference_Location :
Chemnitz
Print_ISBN :
978-1-4673-1590-6
Electronic_ISBN :
978-1-4673-1589-0
DOI :
10.1109/SSD.2012.6197968
