Planar hall effects and magnetoresistance in Co/Cu/Ni/sub 80/Fe/sub 20/ multilayers

Author

Adeyeye, A.O. ; Tien An Tan ; Win, M.T.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2003

fDate

March 30 2003-April 3 2003

Abstract

In this paper, we have investigated the magnetisation reversal process in [Co (10nm)/Cu (t/sub Cu/)/Ni/sub 80/Fe/sub 20/ (10nm)]/sub 2/ multilayers using a combination of planar Hall effects (PHE) and anisotropic magnetoresistance (AMR) measurements. Planar Hall devices were fabricated on Si(100) substrates using conventional shadow mask technique. Firstly, Co/Cu/Ni/sub 80/Fe/sub 20/ multilayers were prepared by DC sputtering at 10mTorr Ar gas pressure onto a six terminal device shadow mask placed on top of a Si(100) substrate.

Keywords

Hall effect; Hall effect devices; cobalt; copper; ferromagnetic materials; iron alloys; magnetic multilayers; magnetisation reversal; magnetoresistance; nickel alloys; sputter deposition; 10 mtorr; 10 nm; Ar gas pressure; Co-Cu-NiFe; Co/Cu/Ni/sub 80/Fe/sub 20/ multilayers; Si; Si(100) substrates; anisotropic magnetoresistance measurements; conventional shadow mask technique; dc sputtering; magnetisation reversal process; planar hall devices; planar hall effects; Iron; Magnetic fields; Magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230767

Filename

1230767