High efficient Doherty power amplifier for wireless communication: An RF power amplifier for upcoming radio standards like LTE and LTE-Advanced in microstrip technology

We propose a Doherty power amplifier in microstrip technology which is highly suitable for smaller Long Term Evolution (LTE) and LTE-Advanced base stations such as picocells and femtocells. At the 1 dB compression point it delivers more than 29 dBm output power and exhibits a power added efficiency (PAE) of more than 50% also at the 1 dB compression point. The PAE is still as high as 40% at 6 dB backoff. An intermodulation measurement with this amplifier shows an output intercept point of third intermodulation product (OIP3) of 39 dBm.