• DocumentCode
    2053978
  • Title

    Via processing options for MCM-D fabrication: excimer laser ablation vs. reactive ion etching

  • Author

    Tessier, T.G. ; Hoffman, W.F. ; Stafford, J.W.

  • Author_Institution
    Motorola Inc., Schaumburg, IL, USA
  • fYear
    1991
  • fDate
    11-16 May 1991
  • Firstpage
    827
  • Lastpage
    834
  • Abstract
    The use of reactive ion etching and excimer laser ablation processes for the etching of vias through thick layers of dielectric (up to 25 μm thick) in multichip module fabrication is evaluated. A comparison of possible masking schemes is presented. Typical etch results obtained by these techniques are shown and compared. A throughput analysis of these two via fabrication techniques for use in a high-volume multichip module substrate facility is presented. Results obtained suggest that laser processing is a viable alternative to reactive ion etching for multichip module substrate via fabrication
  • Keywords
    hybrid integrated circuits; integrated circuit technology; laser beam machining; masks; sputter etching; 25 micron; MCM-D fabrication; excimer laser ablation; masking schemes; multichip module; reactive ion etching; substrate via fabrication; thick dielectric layers; via etching; via processing options; Costs; Dielectric substrates; Dielectric thin films; Drilling; Etching; Laser ablation; Manufacturing; Micromachining; Multichip modules; Optical device fabrication;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 1991. Proceedings., 41st
  • Conference_Location
    Atlanta, GA
  • Print_ISBN
    0-7803-0012-2
  • Type

    conf

  • DOI
    10.1109/ECTC.1991.163975
  • Filename
    163975