DocumentCode
2053978
Title
Via processing options for MCM-D fabrication: excimer laser ablation vs. reactive ion etching
Author
Tessier, T.G. ; Hoffman, W.F. ; Stafford, J.W.
Author_Institution
Motorola Inc., Schaumburg, IL, USA
fYear
1991
fDate
11-16 May 1991
Firstpage
827
Lastpage
834
Abstract
The use of reactive ion etching and excimer laser ablation processes for the etching of vias through thick layers of dielectric (up to 25 μm thick) in multichip module fabrication is evaluated. A comparison of possible masking schemes is presented. Typical etch results obtained by these techniques are shown and compared. A throughput analysis of these two via fabrication techniques for use in a high-volume multichip module substrate facility is presented. Results obtained suggest that laser processing is a viable alternative to reactive ion etching for multichip module substrate via fabrication
Keywords
hybrid integrated circuits; integrated circuit technology; laser beam machining; masks; sputter etching; 25 micron; MCM-D fabrication; excimer laser ablation; masking schemes; multichip module; reactive ion etching; substrate via fabrication; thick dielectric layers; via etching; via processing options; Costs; Dielectric substrates; Dielectric thin films; Drilling; Etching; Laser ablation; Manufacturing; Micromachining; Multichip modules; Optical device fabrication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference, 1991. Proceedings., 41st
Conference_Location
Atlanta, GA
Print_ISBN
0-7803-0012-2
Type
conf
DOI
10.1109/ECTC.1991.163975
Filename
163975
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