• DocumentCode
    2053991
  • Title

    Features of forming sub-micron Gaas-structures on Schottky field-effect transistor (SFT)

  • Author

    Novosyadly, Stepan ; Voznyak, Yuri ; Vartsabiuk, Andriy

  • Author_Institution
    Dept. of Radiophysic & Electron., Precarpathian Nat. Univ. nmd V. Stefanyk, Ivao-Frankivsk, Ukraine
  • fYear
    2010
  • fDate
    23-27 Feb. 2010
  • Firstpage
    80
  • Lastpage
    80
  • Abstract
    This article describes a problem about small Schottky barrier height for p-channel GaAs field-effect transistors complementary pair.
  • Keywords
    III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; gallium arsenide; Schottky barrier height; Schottky field-effect transistor; forming submicron GaAs-structures; p-channel field-effect transistors; Circuits; FETs; Gallium arsenide; Heat treatment; Logic testing; Plasma temperature; Schottky barriers; Schottky diodes; Schottky gate field effect transistors; Tungsten; GaAs; Gallium arsenide; Schottky transistors; field-effect transistor; integral circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET), 2010 International Conference on
  • Conference_Location
    Lviv-Slavske
  • Print_ISBN
    978-966-553-875-2
  • Electronic_ISBN
    978-966-553-901-8
  • Type

    conf

  • Filename
    5446037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2053991