DocumentCode
2054030
Title
Magnetization configurations in current-induced tunnel junction switching
Author
Yaowen Liu ; Zongzhi Zhang ; Freitas, P.P. ; Martins, J.L.
Author_Institution
Microsyst. & Nanotechnol., INESC, Lisbon, Portugal
fYear
2003
fDate
March 30 2003-April 3 2003
Lastpage
10
Abstract
In this paper, micromagnetic analysis including the spin-transfer torque and the vortex field is used to simulate the magnetisation orientation during the CIMS loop. The nonlinear characteristic of the I-V curve is also taken into account to explain the pronounced curvature of the R vs I loop. Junctions used in this work have a bottom-pinned structure, and typically show TMR=20% with RXA=16/spl Omega//spl times//spl mu/m/sup 2/ and a breakdown voltage of 0.32V.
Keywords
magnetic switching; magnetisation reversal; micromagnetics; tunnelling magnetoresistance; vortices; 0.32 V; bottom-pinned structure; breakdown voltage; current-induced tunnel junction switching; magnetisation orientation; magnetization configuration; micromagnetic analysis; spin-transfer torque; tunneling magnetoresistance; vortex field; Electrodes; Magnetic switching; Magnetization; Physics; Read only memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230772
Filename
1230772
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