• DocumentCode
    2054384
  • Title

    Which switch for resonant converters?

  • Author

    Smith, Carl ; Woodworth, Arthur

  • Author_Institution
    Int. Rectifier, Oxted, UK
  • fYear
    1995
  • fDate
    34723
  • Firstpage
    42522
  • Lastpage
    610
  • Abstract
    The choice of switch for use in resonant converters depends on several factors: the required current, voltage, frequency and the topology. The main considerations for HEXFET and IGBT in zero current switching (ZCS) and zero voltage switching (ZVS) are discussed. An example of a 1 kW resonant half-bridge running in discontinuous mode using IGBTs running at 250 kHz has been described. Low Vce(on) IGBTs can be operated at frequencies many times greater than their hard switching limits and this will open up a new region of high voltage converter design that was previously not possible with the existing switching devices
  • Keywords
    bridge circuits; insulated gate bipolar transistors; insulated gate field effect transistors; power semiconductor switches; resonant power convertors; switching circuits; 1 kW; 250 kHz; HEXFET; IGBT; ZCS; ZVS; discontinuous mode; high voltage converter; resonant converters; resonant half-bridge; switch; zero current switching; zero voltage switching;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Resonant Systems, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19950048
  • Filename
    472923
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2054384