Frequency output type magnetic sensor using amorphous wire CMOS multivibrator

Author

Cai, C.M. ; Usami, K. ; Mohri, K. ; Hayashi, M.

Author_Institution

Graduate Sch. of Eng., Nagoya Univ., Japan

fYear

2003

fDate

March 30 2003-April 3 2003

Lastpage

11

Abstract

In this paper, we describe a new FM type MI sensor using a two-CMOS inverter RC multivibrator, in which an amorphous wire is inserted in series with the resistor (R/sub o/) utilizing the MI effect due to a diode-capacitance charging mode. The oscillation frequency f directly increases with H/sub ex/with the rate of 34% Oe. Because of its simple design of circuit this kind of square-wave frequency change type MI sensor can be directly connected to microprocessors without A/D converters. The mechanism for the change of frequency is also discussed.

Keywords

amorphous magnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnetic sensors; silicon alloys; FM type magnetoimpedance sensor; FeCoSiB; amorphous wire CMOS multivibrator; diode capacitance charging mode; frequency output type magnetic sensor; microprocessors; oscillation frequency; square wave frequency; Amorphous materials; Circuits; Diodes; Frequency conversion; Inverters; Magnetic sensors; Microprocessors; Resistors; Sensor phenomena and characterization; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2003. INTERMAG 2003. IEEE International

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-7647-1

Type

conf

DOI

10.1109/INTMAG.2003.1230791

Filename

1230791