Title :
Synthesis of ZnO nanowire with dope of phosphorus by NAPLD and its characteristic evaluation
Author :
Kumeda, Akio ; Toya, K. ; Kubo, K. ; Tsuta, K. ; Higashihata, M. ; Nakamura, D. ; Okada, T. ; CAO, Bingqiang ; Sakai, Kentaro
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
Abstract :
Phosphorus doped ZnO (ZnO:P) nanowires have been successfully grown on the annealed c-cut sapphire substrate using catalyst-free nanoparticle-assisted pulsed-laser deposition, and characteristics of the nanowires was evaluated. A sintered ZnO target doped with P2O5 was used for synthesis the ZnO:P nanowires.
Keywords :
II-VI semiconductors; nanofabrication; nanowires; phosphorus; pulsed laser deposition; semiconductor growth; sintering; wide band gap semiconductors; zinc compounds; Al2O3; ZnO:P; annealed c-cut sapphire substrate; catalyst-free nanoparticle-assisted pulsed-laser deposition; phosphorus doped nanowires; sintering; ZnO; nanowire; p-n junction; phosphorus; pulsed-laser deposition;
Conference_Titel :
TENCON 2010 - 2010 IEEE Region 10 Conference
Conference_Location :
Fukuoka
Print_ISBN :
978-1-4244-6889-8
DOI :
10.1109/TENCON.2010.5686692
