Title :
Current induced switching of magnetic tunnel junctions
Author :
Adam, R. ; Stein, S. ; Ilin, K. ; Wunsch, S. ; Crocoll, E. ; Schelten, J. ; Siegel, M. ; Kohlstedt, H.H.
Author_Institution :
Inst. of Thin Films & Interfaces, Res. Center Julich, Germany
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we fabricated and tested Co/Al/sub 2/O/sub 3//Co magnetic tunnel junctions embedded in coplanar strip transmission lines designed for high-frequency device measurements. The device bottom wiring was patterned using photolithography and Ar ion beam etching. Relative tunneling magnetoresistance of the magnetic tunnel junction fabricated from as-deposited thin film multilayer was measured as a function of external magnetic fields at 295 K.
Keywords :
alumina; cobalt; ferromagnetic materials; magnetic multilayers; magnetic switching; magnetic thin film devices; magnetic thin films; magnetoresistive devices; photolithography; sputter etching; tunnelling magnetoresistance; 295 K; Ar ion beam etching; Co-Al/sub 2/O/sub 3/-Co; Co/Al/sub 2/O/sub 3//Co magnetic tunnel junctions; coplanar strip transmission lines; current induced switching; external magnetic fields; high-frequency device; multilayer; photolithography; thin films; tunneling magnetoresistance; Argon; Coplanar transmission lines; Lithography; Magnetic field measurement; Magnetic switching; Magnetic tunneling; Strips; Testing; Transmission line measurements; Wiring;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230809
