Title :
Spin dependent transport phenomena in the NiFe/AlO/Cu/AlO/NiFe double tunnel junctions
Author :
Hayakawa, J. ; Itou, K. ; Ichimura, M. ; Sakuma, A.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fDate :
March 30 2003-April 3 2003
Abstract :
In this study, in order to develop the highly performable spintronics devices such as three terminal spin devices, we first began to examine the fundamental spin transport properties in the spin-valve type NiFe/AlO/Cu/NiFe/MnIr double junctions, which has never been studied experimentally so far. The samples were grown on SiO/sub 2/ substrate by magnetron sputtering method. Magnetoresistance effects in the NiFe/AlO/Cu/NiFe/MnIr double junctions was studied at 4.2 K and room temperature.
Keywords :
aluminium compounds; copper; iridium alloys; iron alloys; magnetic thin film devices; magnetic thin films; manganese alloys; nickel alloys; spin polarised transport; spin valves; sputtered coatings; tunnelling magnetoresistance; 293 to 298 K; 4.2 K; NiFe-AlO-Cu-NiFe-MnIr; SiO/sub 2/ substrate; magnetoresistance effects; magnetron sputtering; room temperature; spin transport properties; spin-valve type NiFe/AlO/Cu/AlO/NiFe double tunnel junctions; Artificial intelligence; Atmosphere; Large Hadron Collider; Magnetic devices; Magnetic fields; Magnetic switching; Magnetoelectronics; Physics; Sputtering; Temperature;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230810
