DocumentCode
2055099
Title
Temperature and bias voltage dependence of CoFe/AlO/sub x//Py/AlO/sub x//CoFe double barrier junctions
Author
Thomas, Abu ; Bruckl, H. ; Schmalhorst, J. ; Reiss, G.
Author_Institution
Dept. of Phys., Bielefeld Univ., Germany
fYear
2003
fDate
March 30 2003-April 3 2003
Lastpage
11
Abstract
In this paper, we compare the transport properties and temperature dependence of DBJs and single barrier junctions (SBJ). The results are discussed within a serial resistor model of the two single junctions. Ballistic and diffusive contributions to the tunneling current can be estimated, then.
Keywords
aluminium compounds; ballistic transport; cobalt alloys; iron alloys; magnetic tunnelling; resistors; CoFe-AlO/sub x/-AlO/sub x/-CoFe; CoFe/AlO/sub x//Py/AlO/sub x//CoFe double barrier junctions; ballistic transport; bias voltage dependence; serial resistor model; single barrier junctions; temperature dependence; transport properties; tunneling current; Temperature dependence; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230813
Filename
1230813
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