Structural and optical measurements of residual strain and relaxation of lattice mismatched InGaAs/GaAs heterostructures

Author

Gelczuk, Lukasz ; Dabrowska-Szata, Maria ; Serafinczuk, Jaroslaw ; Motyka, Marcin ; Misiewicz, Jan

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Warsaw

fYear

2007

fDate

8-10 July 2007

Firstpage

23

Lastpage

26

Abstract

In this paper the effect of strain relaxation on the structural and optical properties of lattice mismatched InGaAs/GaAs heterostructures has been studied by means of X-ray diffractometry and photoreflectance spectroscopy. X-ray diffractometry reveals anisotropic strain relaxation, related to asymmetry in the formation of misfit dislocations, causing distortion of the epilayer unit cell and lowering its symmetry to orthorhombic. By using room temperature photoreflectance spectroscopy, we observed residual strain induced a splitting of valence band energies. The results were analyzed by means of deformation potential theory that enables us to estimate the extent of strain relaxation and the values of residual strain in the layers.

Keywords

III-V semiconductors; X-ray diffraction; deformation; dislocations; gallium arsenide; indium compounds; internal stresses; photoreflectance; semiconductor epitaxial layers; semiconductor heterojunctions; stress relaxation; valence bands; InGaAs-GaAs; X-ray diffractometry; deformation potential theory; epilayer unit cell; lattice mismatched heterostructures; misfit dislocations; optical measurements; orthorhombic symmetry; photoreflectance spectroscopy; residual strain; strain relaxation; structural measurements; valence band energies; Capacitive sensors; Gallium arsenide; Geometrical optics; Indium gallium arsenide; Lattices; Optical diffraction; Optical distortion; Spectroscopy; Strain measurement; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Microsystems, 2007 International Students and Young Scientists Workshop on

Conference_Location

Dresden

Print_ISBN

978-1-4244-1313-3

Electronic_ISBN

978-1-4244-1314-0

Type

conf

DOI

10.1109/STYSW.2007.4559117

Filename

4559117