Simulation of the influence of grain structure of heteroepitaxial nitrides layers on the performance of MSM detector

Author

Szyszka, Adam ; Paszkiewicz, Bogdan ; Paszkiewicz, Regina ; Tlaczala, Marek

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Warsaw

fYear

2007

fDate

8-10 July 2007

Firstpage

78

Lastpage

81

Abstract

The influence of potential barriers formed at grain boundaries in heteroepitaxial nitrides layers on MSM (metal-semiconductor-metal) detector performance was simulated. Three types of structures: without deep traps, with point deep traps and with deep traps located in grain boundary (GB) were examined and compared. The time response characteristics of structures have been characterized.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; grain boundaries; metal-semiconductor-metal structures; metallic epitaxial layers; semiconductor epitaxial layers; ultraviolet detectors; AlGaN; MSM detector; deep traps; grain boundaries; grain structure; heteroepitaxial nitrides layers; metal-semiconductor-metal detector; potential barriers; Aluminum gallium nitride; Detectors; Electrodes; Electron traps; Epitaxial growth; Epitaxial layers; Grain boundaries; Optical polarization; Photoconductivity; Photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Microsystems, 2007 International Students and Young Scientists Workshop on

Conference_Location

Dresden

Print_ISBN

978-1-4244-1313-3

Electronic_ISBN

978-1-4244-1314-0

Type

conf

DOI

10.1109/STYSW.2007.4559130

Filename

4559130