• DocumentCode
    20560
  • Title

    A Wideband Doherty Architecture With 36% of Fractional Bandwidth

  • Author

    Piazzon, L. ; Giofre, R. ; Colantonio, P. ; Giannini, F.

  • Author_Institution
    Electron. Eng. Dept., Univ. of Roma Tor Vergata, Rome, Italy
  • Volume
    23
  • Issue
    11
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    626
  • Lastpage
    628
  • Abstract
    This letter presents the design and characterization of a novel wideband Doherty architecture. Both input splitter and output combiner are realized by means of two-sections branch-line alike couplers. The realized prototype based on commercial GaN active devices shows more than 36% of fractional bandwidth, from 1.67 to 2.41 GHz. In this frequency range, the measured drain efficiency is within 59% and 43% at 6 dB of output power back-off and within 72% and 53% at saturation, with an output power around 41 dBm. More than 47% average efficiency and less than -40 dBc adjacent channel power ratio are measured applying a 20 MHz LTE digitally pre-distorted signal when the average output power is around 4 W.
  • Keywords
    III-V semiconductors; Long Term Evolution; UHF amplifiers; gallium compounds; wideband amplifiers; GaN; LTE digitally pre-distorted signal; Long Term Evolution; UHF amplifiers; adjacent channel power ratio; branch-line alike couplers; drain efficiency; frequency 1.67 GHz to 2.41 GHz; frequency 20 MHz; wideband Doherty architecture; Broadband communication; Doherty amplifiers; Impedance; Power generation; Wideband; Broadband; Doherty amplifier; GaN; high efficiency; wideband;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2013.2281413
  • Filename
    6606821