DocumentCode
2056112
Title
Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source
Author
Hamano, A. ; Takatsu, Y. ; Ohno, S. ; Minamide, H. ; Ito, H. ; Usuki, Y.
Author_Institution
Mater. Res. Lab., Furukawa Co., Ltd., Tsukuba, Japan
fYear
2011
fDate
22-26 May 2011
Firstpage
1
Lastpage
1
Abstract
The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz.
Keywords
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; optical variables measurement; reflectivity; silicon; silicon compounds; terahertz wave generation; wide band gap semiconductors; GaAs; GaN; SiC; carrier density; frequency 2.5 THz to 30 THz; nondestructive rapid measurement; reflectance measurement; semiconductors reflective spectra; time 2 s; tunable terahertz source; Gallium nitride; Phonons; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location
Munich
ISSN
Pending
Print_ISBN
978-1-4577-0533-5
Electronic_ISBN
Pending
Type
conf
DOI
10.1109/CLEOE.2011.5942519
Filename
5942519
Link To Document