Title :
Nondestructive rapid measurement of GaAs, GaN, SiC, and Si semiconductors using one tunable terahertz source
Author :
Hamano, A. ; Takatsu, Y. ; Ohno, S. ; Minamide, H. ; Ito, H. ; Usuki, Y.
Author_Institution :
Mater. Res. Lab., Furukawa Co., Ltd., Tsukuba, Japan
Abstract :
The carrier density was determined from the reflectance measurement using one or two waves in the reflective spectra of semiconductors. The mapping of Si was carried out at the rate of 2 s per point. The tunable terahertz (THz) source was able to generate the THz-wave in the range from 2.5 to 30 THz.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; gallium compounds; optical variables measurement; reflectivity; silicon; silicon compounds; terahertz wave generation; wide band gap semiconductors; GaAs; GaN; SiC; carrier density; frequency 2.5 THz to 30 THz; nondestructive rapid measurement; reflectance measurement; semiconductors reflective spectra; time 2 s; tunable terahertz source; Gallium nitride; Phonons; Silicon carbide;
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4577-0533-5
Electronic_ISBN :
Pending
DOI :
10.1109/CLEOE.2011.5942519
