A new BJT-transistor with ability of controlling current gain

In this paper a new structure for BJT-transistor based on SOI technology has been designed. This structure has an extra pin as a gate. By applying a voltage to the gate, the effective base width is controlled, and this gives the ability to control the transistor gain. This transistor is investigated via extensive simulations. All simulations have been performed using Silvaco software showing current gain variations up to 10 times. The current gain of the transistor without any gate voltages is about 200, which increases to 2000 by increasing the gate voltage. This gives potential applications, like mixers and gain controls with a good performance. In this paper, the doping levels distributions have been designed to achieve the best current gain and output conductance.