DocumentCode
2057031
Title
Antiferromagnetic exchange coupling in epitaxial Fe/Si/Ge/Si/Fe structures
Author
Gareev, R.R. ; Burgler, D.E. ; Braak, H. ; Buchmeier, M. ; Grunberg, P.A.
Author_Institution
Inst. fur Festkorperforschung, Forschungszentrum Julich GmbH, Germany
fYear
2003
fDate
March 30 2003-April 3 2003
Abstract
In this paper, we grow nominally pure Ge spacers by electron-beam evaporation in order to obtain epitaxial growth of the whole structure, a necessary condition for strong AFC.
Keywords
antiferromagnetic materials; electron beam deposition; elemental semiconductors; exchange interactions (electron); germanium; interface structure; iron; magnetic epitaxial layers; magnetic structure; metallic thin films; semiconductor epitaxial layers; silicon; Fe-Si-Ge-Si-Fe; antiferromagnetic exchange coupling; electron-beam evaporation; epitaxial Fe/Si/Ge/Si/Fe structures; epitaxial growth; Antiferromagnetic materials; Automatic frequency control; Couplings; Epitaxial growth; Insulation; Iron; Lattices; Saturation magnetization; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7647-1
Type
conf
DOI
10.1109/INTMAG.2003.1230899
Filename
1230899
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