Title :
Antiferromagnetic exchange coupling in epitaxial Fe/Si/Ge/Si/Fe structures
Author :
Gareev, R.R. ; Burgler, D.E. ; Braak, H. ; Buchmeier, M. ; Grunberg, P.A.
Author_Institution :
Inst. fur Festkorperforschung, Forschungszentrum Julich GmbH, Germany
fDate :
March 30 2003-April 3 2003
Abstract :
In this paper, we grow nominally pure Ge spacers by electron-beam evaporation in order to obtain epitaxial growth of the whole structure, a necessary condition for strong AFC.
Keywords :
antiferromagnetic materials; electron beam deposition; elemental semiconductors; exchange interactions (electron); germanium; interface structure; iron; magnetic epitaxial layers; magnetic structure; metallic thin films; semiconductor epitaxial layers; silicon; Fe-Si-Ge-Si-Fe; antiferromagnetic exchange coupling; electron-beam evaporation; epitaxial Fe/Si/Ge/Si/Fe structures; epitaxial growth; Antiferromagnetic materials; Automatic frequency control; Couplings; Epitaxial growth; Insulation; Iron; Lattices; Saturation magnetization; Temperature; Tunneling;
Conference_Titel :
Magnetics Conference, 2003. INTERMAG 2003. IEEE International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-7647-1
DOI :
10.1109/INTMAG.2003.1230899
