• DocumentCode
    2057051
  • Title

    Direct modulation of bistable semiconductor ring lasers

  • Author

    Cai, X. ; Mezosi, G. ; Wang, Z. ; Jiang, P. ; Memon, M.I. ; Sorel, M. ; Chi, N. ; Yu, S.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
  • fYear
    2011
  • fDate
    22-26 May 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We report the direct modulation of SRL at bit rates up to 1.5Gb/s. The experimental results show that the DC bias current is the key factor for direct modulation. The devices were fabricated on a multiquantum-well(QW) InAlGaAs-InP wafer structure with a gain region consisting of five 6-nm compressively strained Al0.07Ga0.22In0.71As wells and six 10-nm slightly tensile strained barriers.
  • Keywords
    laser stability; optical bistability; optical fabrication; optical modulation; ring lasers; semiconductor lasers; DC bias current; InAlGaAs-InP; bistable semiconductor ring lasers; direct modulation; gain region; multiquantum well; wafer structure; Bit error rate; Bit rate; Modulation; Optical bistability; Ring lasers; Semiconductor lasers; Signal analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference
  • Conference_Location
    Munich
  • ISSN
    Pending
  • Print_ISBN
    978-1-4577-0533-5
  • Electronic_ISBN
    Pending
  • Type

    conf

  • DOI
    10.1109/CLEOE.2011.5942556
  • Filename
    5942556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2057051