DocumentCode :
2057097
Title :
High speed AlGaInAs electroabsorption modulated laser and its optically equalized operation at 86 Gb/s
Author :
Kazmierski, C. ; Jany, C. ; Decobert, J. ; Alexandre, F. ; Blache, F. ; Scavennec, A. ; Winzer, P.J. ; Doerr, C.R. ; Raybon, G. ; Adamiecki, A. ; Johansen, T.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis
fYear :
2008
fDate :
21-25 Sept. 2008
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a novel compact AlGaInAs electroabsorption modulated laser at 86 Gb/s including bit-error rate measurements using an optical equalizer.
Keywords :
III-V semiconductors; aluminium compounds; electroabsorption; equalisers; error statistics; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; AlGaInAs; bit rate 86 Gbit/s; bit-error rate; electroabsorption modulated laser; high speed laser; optical equalizer; optically equalized operation; Bandwidth; Bit error rate; Equalizers; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Optical design; Optical modulation; Optical transmitters; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location :
Brussels
Print_ISBN :
978-1-4244-2227-2
Electronic_ISBN :
978-1-4244-2228-9
Type :
conf
DOI :
10.1109/ECOC.2008.4729343
Filename :
4729343
Link To Document :
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