Extended ground-state and excited-state carrier dynamics control in a mode-locked two-section quantum dot laser: Joining absorber reverse-bias and resistor self-electro-optic effect (SEED) emission-state regimes

Author

Breuer, S. ; Drzewietzki, L. ; Elsässer, W.

Author_Institution

Inst. of Appl. Phys., Tech. Univ. Darmstadt, Darmstadt, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

The emission-state dynamics of a strongly spectrally inhomogeneously broadened two-section InAs/InGaAs quantum dot (QD) laser are experimentally investigated by exploiting a resistor-SEED configuration and by reverse biasing the absorber. By joining these operation regimes for the first time, a combined and complete understanding of the two-state carrier dynamics including a photon pumping process in mode-locked operation is obtained.

Keywords

III-V semiconductors; electro-optical effects; excited states; gallium arsenide; ground states; indium compounds; laser mode locking; optical pumping; optical saturable absorption; quantum dot lasers; InAs-InGaAs; absorber reverse-bias; excited-state carrier dynamics control; extended ground-state carrier dynamics; mode-locked two-section quantum dot laser; photon pumping process; resistor self-electro-optic effect; resistor-SEED configuration; two-state carrier dynamics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942558

Filename

5942558