Silicon Nano Beam Fabricated by MEMS Technology and Its Electronic Properties

In this paper, a MEMS method is developed to form suspended nano beams in 10 nm order width and thickness. The dimension of the nano beams is controlled precisely by employing traditional anisotropic self stopping etching instead of popular nano fabrication method such as e-beam lithography, which presents an opportunity for the future low cost batch product. The I-V measurements indicate that the resistance of the silicon nano beams has significant aging effect, which increases distinctly after released. The reason has been contributed to the oxidation of surface silicon. Besides, it is found that the resistance of the nano wire can vary with the gate voltage. As the gate voltage increases, a carrier depletion of the nano wire is observed. This may provide a new way to motivate and detect the resonation of the nano beam