DocumentCode
2057183
Title
100°C, 10 Gbps operation of buried tunnel junction GaInNAs VCSELs
Author
Onishi, Yutaka ; Saga, Nobuhiro ; Koyama, Kenji ; Doi, Hideyuki ; Ishizuka, Takashi ; Yamada, Takashi ; Fujii, Kosuke ; Mori, Hiroki ; Hashimoto, Junichi ; Shimazu, Mitsuru ; Katsuyama, Tsukuru
Author_Institution
Transm. Devices R&D Labs., Sumitomo Electr. Ind., Ltd., Yokohama
fYear
2008
fDate
21-25 Sept. 2008
Firstpage
1
Lastpage
2
Abstract
10 Gbps operation of BTJ GaInNAs VCSELs is achieved over temperature range of 25degC to 100degC with operation current of 5.6 mA and extinction ratio of 4.2 dB.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; surface emitting lasers; wide band gap semiconductors; GaInNAs; VCSEL; bit rate 10 Gbit/s; buried tunnel junction; current 5.6 mA; extinction ratio; operation current; temperature 100 degC to 25 degC; Apertures; Distributed Bragg reflectors; Gallium arsenide; High speed optical techniques; Mirrors; Optical losses; Optical refraction; Optical variables control; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication, 2008. ECOC 2008. 34th European Conference on
Conference_Location
Brussels
Print_ISBN
978-1-4244-2227-2
Electronic_ISBN
978-1-4244-2228-9
Type
conf
DOI
10.1109/ECOC.2008.4729347
Filename
4729347
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