Near-UV laser diodes for external cavity lasers

Author

Scheibenzuber, Wolfgang G. ; Schwarz, Ulrich T.

Author_Institution

Fraunhofer IAF, Freiburg, Germany

fYear

2011

fDate

22-26 May 2011

Firstpage

1

Lastpage

1

Abstract

We develop (Al,In)GaN laser diodes on free standing GaN substrates in the wavelength range from 390 nm to 425 nm for external cavity lasers. By varying the indium content in the InGaN active region we tailor the emission wavelength for specific applications. For usage in an external cavity laser module, the internal Fabry-Perot-modes of the laser diode have to be suppressed to provide good stability and tunability of the emission wavelength and avoid mode-hopping. Therefore we apply an antireflective coating with a reflectivity below 1% to the front facet of the laser diode.

Keywords

III-V semiconductors; antireflection coatings; gallium compounds; laser cavity resonators; semiconductor lasers; wide band gap semiconductors; antireflective coating; emission wavelength; external cavity lasers; internal Fabry-Perot-modes; near-UV laser diodes; substrates; Cavity resonators; Diode lasers; Laser stability; Optical pumping; Power generation; Semiconductor lasers; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe (CLEO EUROPE/EQEC), 2011 Conference on and 12th European Quantum Electronics Conference

Conference_Location

Munich

ISSN

Pending

Print_ISBN

978-1-4577-0533-5

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/CLEOE.2011.5942579

Filename

5942579