Title :
Sputtered nickel coverage of the SiO2 nano-step
Author :
Sarajlic, M. ; Radovic, D. Vasiljevic ; Ramovic, R. ; Tanaskovic, D. ; Duric, Z.
Author_Institution :
IHTM Center for Microelectron. Technogies & Single Crystal, Belgrade
Abstract :
In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.
Keywords :
nanotechnology; nickel; silicon compounds; sputter deposition; Ni layers; SiO2 nano-step; deposition; microelectronics equipment; nanotechnology; nickel silicide films; sputtered nickel coverage; Argon; Microelectronics; Nanoelectronics; Nickel; Plasma applications; Plasma materials processing; Plasma simulation; Sputtering; Ultra large scale integration; Wet etching;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559235
