• DocumentCode
    2057841
  • Title

    Sputtered nickel coverage of the SiO2 nano-step

  • Author

    Sarajlic, M. ; Radovic, D. Vasiljevic ; Ramovic, R. ; Tanaskovic, D. ; Duric, Z.

  • Author_Institution
    IHTM Center for Microelectron. Technogies & Single Crystal, Belgrade
  • fYear
    2008
  • fDate
    11-14 May 2008
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    In this paper we give a survey of the problems that we encountered during deposition and examination of the Ni layers on SiO2 nano-step. We made nano-layer of SiO2 and deposited Ni film on top of it thus making particular structure in nano dimensions by utilizing microelectronics equipment. This research and solutions that we made help in understanding feasibility of transition from microelectronics to nanotechnology. Employment of Ni layers is motivated by the increased importance of the nickel silicide films in ULSI.
  • Keywords
    nanotechnology; nickel; silicon compounds; sputter deposition; Ni layers; SiO2 nano-step; deposition; microelectronics equipment; nanotechnology; nickel silicide films; sputtered nickel coverage; Argon; Microelectronics; Nanoelectronics; Nickel; Plasma applications; Plasma materials processing; Plasma simulation; Sputtering; Ultra large scale integration; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2008. MIEL 2008. 26th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    978-1-4244-1881-7
  • Electronic_ISBN
    978-1-4244-1882-4
  • Type

    conf

  • DOI
    10.1109/ICMEL.2008.4559235
  • Filename
    4559235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2057841