DocumentCode
20581
Title
An Electromigration Failure Distribution Model for Short-Length Conductors Incorporating Passive Sinks/Reservoirs
Author
Lin, M.H. ; Oates, Anthony S.
Author_Institution
Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
Volume
13
Issue
1
fYear
2013
fDate
Mar-13
Firstpage
322
Lastpage
326
Abstract
The effects of passive (inactive) sinks and reservoirs on electromigration failure distributions close to critical current density jc are examined. We develop a model to accurately predict failure distributions where the inactive segment modifies the void nucleation component of jc. We show that failure distributions can exhibit large deviations of median time to fail in the presence of sinks and reservoirs, but at low percentiles typical of reliability requirements, failure time modifications are much reduced.
Keywords
critical current density (superconductivity); electromigration; integrated circuit modelling; critical current density; electromigration failure distribution model; failure distributions; passive sinks/reservoirs; short-length conductors; Conductors; Current density; Electromigration; Metals; Reliability; Reservoirs; Stress; Backflow; Blech length; Cu/low-k; electromigration; failure distribution; reliability; reservoir; sink;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2012.2233201
Filename
6416034
Link To Document