• DocumentCode
    20581
  • Title

    An Electromigration Failure Distribution Model for Short-Length Conductors Incorporating Passive Sinks/Reservoirs

  • Author

    Lin, M.H. ; Oates, Anthony S.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Ltd., Hsinchu, Taiwan
  • Volume
    13
  • Issue
    1
  • fYear
    2013
  • fDate
    Mar-13
  • Firstpage
    322
  • Lastpage
    326
  • Abstract
    The effects of passive (inactive) sinks and reservoirs on electromigration failure distributions close to critical current density jc are examined. We develop a model to accurately predict failure distributions where the inactive segment modifies the void nucleation component of jc. We show that failure distributions can exhibit large deviations of median time to fail in the presence of sinks and reservoirs, but at low percentiles typical of reliability requirements, failure time modifications are much reduced.
  • Keywords
    critical current density (superconductivity); electromigration; integrated circuit modelling; critical current density; electromigration failure distribution model; failure distributions; passive sinks/reservoirs; short-length conductors; Conductors; Current density; Electromigration; Metals; Reliability; Reservoirs; Stress; Backflow; Blech length; Cu/low-k; electromigration; failure distribution; reliability; reservoir; sink;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2012.2233201
  • Filename
    6416034