Title :
New boundary conditions for the study of charge transport in solid-state devices
Author :
Volovichev, I.N. ; Velazquez-Perez, J.E. ; Gurevich, Yu.G.
Author_Institution :
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca
Abstract :
Boundary conditions to the Poisson and transport equations for stationary transport processes of nonequilibrium carriers in semiconductor structures, including solar cells, are formulated. The applicability of the resulting boundary conditions for solar cells consisting of several various materials (metals, bipolar semiconductors, including ones in the quasineutrality approach) and their structures are analyzed for both closed and open circuit conditions.
Keywords :
Poisson equation; carrier mobility; semiconductor device models; solar cells; Poisson equations; bipolar semiconductors; boundary conditions; charge transport; metals; nonequilibrium carriers; quasineutrality approach; semiconductor structures; solar cells; solid-state devices; stationary transport processes; transport equations; Boundary conditions; Current; Electrons; Inorganic materials; Microelectronics; Photovoltaic cells; Poisson equations; Radiative recombination; Solid state circuits; Spontaneous emission;
Conference_Titel :
Microelectronics, 2008. MIEL 2008. 26th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-1881-7
Electronic_ISBN :
978-1-4244-1882-4
DOI :
10.1109/ICMEL.2008.4559245
