New boundary conditions for the study of charge transport in solid-state devices

Author

Volovichev, I.N. ; Velazquez-Perez, J.E. ; Gurevich, Yu.G.

Author_Institution

Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca

fYear

2008

fDate

11-14 May 2008

Firstpage

151

Lastpage

154

Abstract

Boundary conditions to the Poisson and transport equations for stationary transport processes of nonequilibrium carriers in semiconductor structures, including solar cells, are formulated. The applicability of the resulting boundary conditions for solar cells consisting of several various materials (metals, bipolar semiconductors, including ones in the quasineutrality approach) and their structures are analyzed for both closed and open circuit conditions.

Keywords

Poisson equation; carrier mobility; semiconductor device models; solar cells; Poisson equations; bipolar semiconductors; boundary conditions; charge transport; metals; nonequilibrium carriers; quasineutrality approach; semiconductor structures; solar cells; solid-state devices; stationary transport processes; transport equations; Boundary conditions; Current; Electrons; Inorganic materials; Microelectronics; Photovoltaic cells; Poisson equations; Radiative recombination; Solid state circuits; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. MIEL 2008. 26th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-1881-7

Electronic_ISBN

978-1-4244-1882-4

Type

conf

DOI

10.1109/ICMEL.2008.4559245

Filename

4559245