RF power LDMOSFET characterization and modeling for reliability issues: DC and RF performances

In this paper, we have extracted a large set of RF power LDMOS device significant parameters which should allow us to better understand the degradation phenomena generated by any ageing test. With this intention, a refinement to the electrothermal MET LDMOS model is presented, including the series inductances as parasitic components in the extrinsic circuit. I-V, C-V and S parameter measurements were performed to characterize the DC and RF performances of the device. A methodology for the accurate extraction of model parameters is discussed. The LDMOS model is compared to DC and small signal measurements. It is shown that the DC and RF performances of the device model are in good agreement with the measured data. The extracted non-linear model will be used as a reliability tool in order to correlate RF LDMOS electrical parameter drifts with any kind of degradation phenomenon, after different life-tests (DC and/ or RF life-tests).