Title :
Nanometer-scale selective epitaxy of InAs quantum dots via indium segregation
Author :
Yeoh, T.S. ; Elarde, V.C. ; Swint, R.B. ; Wu, E.R. ; Coleman, J.J.
Author_Institution :
Illinois Univ., Urbana, IL, USA
Abstract :
We report on recent results utilizing pseudomorphic InxGa1-xAs films in order to affect the growth, organization and structure of InAs quantum dots. Pseudomorphic InGaAs films exhibit interesting properties due to strain effects. Given time, InxGa1-xAs films release various amounts of indium by surface segregation. This segregated layer of InAs can act to decrease the additional InAs necessary to reach the 2D to 3D transition coverage. This process enables an oxideless, single growth step of quantum dots suitable for use in quantum dot cellular automata computing and other low dimensional electronic systems.
Keywords :
III-V semiconductors; epitaxial growth; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; surface segregation; InxGa1-xAs; InxGa1-xAs film organisation; InxGa1-xAs films growth; InxGa1-xAs films structure; InAs; InAs quantum dots; growth step; indium segregation; low dimensional electronic systems; nanometer scale selective epitaxy; quantum dot cellular automata computing; strain effects; surface segregation; transition coverage; Assembly; Epitaxial growth; Etching; Gallium arsenide; Indium gallium arsenide; Lithography; Optical films; Quantum computing; Quantum dots; US Department of Transportation;
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
DOI :
10.1109/NANO.2003.1230951
