An analysis of some semi-classical and quantum mechanical surface potential models of MOS inversion layer

In this paper, an analysis of some MOS inversion layer models based on surface potential is presented. In semi- classical cases the implicit model and an explicit approximate relation for surface potential as function of terminal voltage is used. This is compared with models which takes into account the quantum mechanical effects that arise in deep-submicron MOSFET´s. These effects are incorporated in model by coupled Poisson-Schrodinger equation solved using variational wave function approach, as well as numerical solver.