• DocumentCode
    2058508
  • Title

    A novel application of resonant tunneling devices in high performance digital circuits

  • Author

    Ding, Li ; Mazumder, Prasenjit

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
  • Volume
    2
  • fYear
    2003
  • fDate
    12-14 Aug. 2003
  • Firstpage
    520
  • Abstract
    Resonant tunneling devices have been used in various digital circuit applications to improve packing density, circuit speed, as well as power consumption. In this paper, we describe a new class of applications of using those quantum tunneling devices in digital circuit design. More specifically, we have developed a strategy to use RTDs in conjunction with CMOS logic circuits that leads to new circuits that have elevated noise immunity. The proposed method utilizes RTD´s negative differential resistance property and the fact that they have very high speed index. We have shown through simulation that the proposed circuits have increased noise immunity yet they retain all the advantages of CMOS dynamic circuits. The benefit of the proposed circuits is still evident using currently available silicon-based RTD´s with a relatively small peak-to-valley current ratio.
  • Keywords
    CMOS logic circuits; negative resistance; network synthesis; resonant tunnelling diodes; CMOS dynamic circuits; CMOS logic circuits; RTD applications; digital circuit design; negative differential resistance; noise immunity; peak valley current ratio; quantum tunneling devices; resonant tunneling devices; silicon based RTDs; Application software; CMOS logic circuits; CMOS technology; Circuit noise; Digital circuits; Energy consumption; Logic devices; Resonant tunneling devices; Semiconductor diodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
  • Print_ISBN
    0-7803-7976-4
  • Type

    conf

  • DOI
    10.1109/NANO.2003.1230961
  • Filename
    1230961