DocumentCode :
2058508
Title :
A novel application of resonant tunneling devices in high performance digital circuits
Author :
Ding, Li ; Mazumder, Prasenjit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
2
fYear :
2003
fDate :
12-14 Aug. 2003
Firstpage :
520
Abstract :
Resonant tunneling devices have been used in various digital circuit applications to improve packing density, circuit speed, as well as power consumption. In this paper, we describe a new class of applications of using those quantum tunneling devices in digital circuit design. More specifically, we have developed a strategy to use RTDs in conjunction with CMOS logic circuits that leads to new circuits that have elevated noise immunity. The proposed method utilizes RTD´s negative differential resistance property and the fact that they have very high speed index. We have shown through simulation that the proposed circuits have increased noise immunity yet they retain all the advantages of CMOS dynamic circuits. The benefit of the proposed circuits is still evident using currently available silicon-based RTD´s with a relatively small peak-to-valley current ratio.
Keywords :
CMOS logic circuits; negative resistance; network synthesis; resonant tunnelling diodes; CMOS dynamic circuits; CMOS logic circuits; RTD applications; digital circuit design; negative differential resistance; noise immunity; peak valley current ratio; quantum tunneling devices; resonant tunneling devices; silicon based RTDs; Application software; CMOS logic circuits; CMOS technology; Circuit noise; Digital circuits; Energy consumption; Logic devices; Resonant tunneling devices; Semiconductor diodes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology, 2003. IEEE-NANO 2003. 2003 Third IEEE Conference on
Print_ISBN :
0-7803-7976-4
Type :
conf
DOI :
10.1109/NANO.2003.1230961
Filename :
1230961
Link To Document :
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